Senior Development Engineer (M/F/D)
Overview
Our client is a global semiconductor innovator developing next-generation Gallium Nitride (GaN) power technologies that are helping reshape power conversion across AI infrastructure, renewable energy, industrial automation, data centres, electric mobility and advanced robotics.
As part of a growing wide-bandgap semiconductor team, you will play a key role in developing and optimising advanced GaN power devices, helping translate cutting-edge device physics into robust, scalable products used in real-world applications. This is an opportunity to work on complex technical challenges, influence future technology roadmaps and collaborate with leading experts across device development, process technology and product engineering.
Responsibilities
- Lead the development and optimisation of advanced GaN power device architectures.
- Define device performance goals and balance trade-offs between performance, reliability and manufacturability.
- Drive TCAD simulation, modelling and device design activities to support technology and product development.
- Analyse device behaviour and identify opportunities to improve efficiency, robustness and overall performance.
- Collaborate closely with process integration, characterisation, reliability and product engineering teams.
- Support the industrialisation of new device concepts and technologies.
- Contribute technical expertise to strategic technology and product roadmaps.
- Lead complex technical projects and drive innovation within a multidisciplinary global environment.
- Mentor junior engineers and contribute to the growth of the wider engineering team.
Requirements
- MSc, PhD or equivalent in Semiconductor Physics, Electrical Engineering, Microelectronics or a related discipline.
- Proven experience developing semiconductor devices, ideally within GaN, SiC or other wide-bandgap technologies.
- Strong understanding of semiconductor device physics and power semiconductor design.
- Hands-on experience with TCAD simulation tools and device modelling.
- Experience optimising device performance, reliability and manufacturability.
- Ability to solve complex technical challenges using both analytical and simulation-based approaches.
- Experience working across multidisciplinary teams including process, reliability and product engineering.
- Strong communication skills and ability to influence technical decisions.
Highly Desirable
- Direct experience with GaN power devices.
- Experience with HEMT structures, p-GaN, e-mode or other advanced GaN technologies.
- Knowledge of GaN-on-Silicon or other wide-bandgap process technologies.
- Experience supporting technology transfer or industrialisation activities.
- Understanding of device reliability mechanisms and failure analysis.
- Experience leading technical projects within a semiconductor R&D environment.
Benefits
- Work on some of the most exciting technologies within the rapidly growing GaN semiconductor market.
- Directly influence the development of next-generation power devices and future product roadmaps.
- Collaborate with recognised experts in semiconductor technology and power electronics.
- Join a growing team solving complex engineering challenges with real-world impact.
- Exposure to applications including AI infrastructure, renewable energy, industrial automation and electrification.
- Flexible working arrangements that promote a healthy work-life balance.
- Competitive salary and comprehensive benefits package.
- Ongoing training, technical development and career progression opportunities.
- Opportunity to work within an international engineering environment at the forefront of wide-bandgap innovation.
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