DSJ Global is looking for a Development Engineer specialised in IGBT for a leading electronics company founded in 1927. It is the world leader in circuit protection with growing global platforms in power control and sensing.
About the Position:
Taking the leading role in the design and technology development of the next generation high voltage silicon power devices
Generating new ideas of device structures and manufacturing process as well as evaluating them by analysis of design of the experiments
Working with wafer foundry partners to reach production maturity of the new designs and processes
Collaborating with the assembly team to ensure long-term reliability in different package formats, requiring chip- and package-level failure analyses and diagnostics
Meeting market trends and requirements by working closely with the Product Marketing team and customers
Master's degree or Ph.D. in a technical field
More than 5 years of experience in design of power semiconductors, preferably IGBTs and/or MOSFETs
Profound experience of IGBT processes and device layout
Experience in TCAD simulations as well as testing and characterisation, semiconductor packaging would be a plus
Fluent English and ability to work independently in a cross-cultural working environment.
Very good analytical and numerical skills
Interested? We look forward to recieving your CV.